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Heating of semiconductor
Semiconductor heating scenarios
The monocrystalline silicon growth process is the process of converting the polycrystalline silicon raw material into monocrystalline silicon, and the commonly used methods are CZ method (CZ method) and zone melting method (FZ method). Resistance/radio frequency heating is adopted for direct pulling method, and thermal stability is guaranteed by ± 0.5 ℃ temperature control and 0.1% accuracy power supply with millisecond level response; The zone melting rule uses high frequency induction (10-50kHz) to produce 15kW/cm? With the above power density, the double-closed loop control maintains the accuracy of 0, 2mm molten zone and drives the crystal to grow stably at 0.5-2mm/min. Both processes realize ordered arrangement of silicon atoms through precise energy control to meet the quality requirements of semiconductor crystal.
Semiconductor heating rectifier power supply

The product strictly complies with IEC60519-1 Safety of Industrial Electrical Equipment and Electromagnetic Treatment Materials - Part 1: General Requirements and GB/T10067.410-2014 Basic Technical Conditions for Electrical Installations and relevant industrial standards, and has a variety of main functions, including stable voltage operation, constant power operation soft-start, uniform heat penetration depth, and intelligent temperature control technology, providing reliable power support for users. Standard PLC control, touch screen screen, optional remote monitoring module, dedicated alarm device, etc. Our company has advanced technical route, IGBT and MOSFET power supply, silicon carbide series power supply. Provide users with a variety of options to meet the special requirements of different industries and processes. Our heating power supply solutions cover the field of semiconductor, new materials and high-end manufacturing, providing precise temperature control for semiconductor crystal growth/epitaxy, photovoltaic ingot/crystal pulling, optical crystal growth and other processes; Stable heating in the preparation of synthetic gems (diamonds, ruby, sapphire) and aerospace superalloy single crystal blades; Meanwhile, it supports the synthesis and processing of superconducting materials, enables industry innovation and drives industry upgrading.

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Product Advantages
Intelligent control algorithm and precision sensor are adopted to ensure stable and uniform heating and improve product quality and production efficiency
High-efficiency circuit design and power components realize high conversion efficiency and reduce energy consumption and use cost
High reliability design with multiple protection mechanisms (overcurrent/overvoltage/short circuit/overheating) to extend equipment life and ensure production safety
Wide voltage input adapts to various power grid environment, with strong operation stability
Support multi-industry customized development to meet differentiated process requirements
The intelligent control system is compatible with local/remote dual mode operation, improving the control convenience
Modular structure design simplifies maintenance process and reduces operation and maintenance cost
Technical Specifications
Model Parameter
Input voltage class Three-phase 380VAC ± 10%
Output voltage range 0-400V/0-250V(Continuously adjustable)
Output power 60KW/100KW/200KW/300KW
Output frequency 20kHz~400kHz
Power supply efficiency ≥90%
Power factor ≥0.93(Full power operation)
Protection class IP54(Dust and water proof)
Heat dissipation mode Water-cooling
Note: If you need more customized parameters, our professional team will provide you with accurate matching solutions
Application Cases
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